{ "meta": { "api_type": "NWO Projects API", "version": "1.0.2", "licence": { "name": "CC0 1.0 Universal", "url": "https://creativecommons.org/publicdomain/zero/1.0", "description": "To the extent possible under law, all copyright and related or neighbouring rights have been waived worldwide to the data made available through this API." }, "documentation": "https://doi.org/10.5281/zenodo.14918287", "release_date": "2025-08-20T00:00:00", "funder": "https://doi.org/10.13039/501100003246", "ror_id": "https://ror.org/04jsz6e67", "date": "2026-11-05T00:00:00", "count": 1, "per_page": 100, "pages": 1, "page": 1 }, "projects": [ { "project_id": "11470", "title": "Organic Semiconductor Vertical Quantum Dots", "funding_scheme_id": 254, "funding_scheme": "Samenwerkingsprogramma NWO-nano 2010 STW", "department": "Toegepaste en Technische Wetenschappen", "sub_department": "Technologiestichting STW", "start_date": "2011-01-01T00:00:00", "end_date": "2017-09-28T00:00:00", "reporting_year": 2010, "summary_nl": "This proposal aims at the fabrication and electronic characterization of a completely new generation of hybrid nanodevices: few-electron/few-hole organic semiconductor vertical quantum dots (OS-VQDs). The device layout is inspired by the GaAs-based vertical QDs developed by Tarucha and coworkers, but explores a completely new range of material combinations. Instead of an InGaAs quantum well sandwiched between AlGaAs tunnel barriers and heavily n-doped GaAs source and drain contacts, our device is fabricated out of an organic semiconductor thin film sandwiched between Al2O3 tunnel barriers and metal source and drain contacts. Contrary to conventional vertical QDs, the different layers in our device do not need to be lattice-matched, which offers great flexibility in materials choice. In our layout, e.g., it is straightforward to fabricate ferromagnetic and superconducting source and drain contacts coupled to the QD. This is an extremely hard thing to do in conventional vertical QDs and opens up the possibility for fascinating physical experiments in the few-charge regime, such as electrically tunable magnetoresistance and supercurrent. Moreover, organic semiconductors are recently attracting a lot of attention as suitable hosts for electron spins, because of the weak spin-orbit coupling (light elements) and possibly reduced hyperfine interaction in these materials. Our system potentially allows for confinement of single electron (hole) spins with extremely long coherence times, being very attractive for electron-spin based quantum information processing. The design is easily extended to few-charge double QDs.\n\nThis project has a fundamental character and economic/societal impact is reasonably not expected on the short term. However, in the long run our design may prove to be extremely useful and versatile for hybrid inorganic-organic logic devices, non-volatile memory elements and or quantum bits for quantum information processing.", "summary_en": "This proposal aims at the fabrication and electronic characterization of a completely new generation of hybrid nanodevices: few-electron/few-hole organic semiconductor vertical quantum dots (OS-VQDs). The device layout is inspired by the GaAs-based vertical QDs developed by Tarucha and coworkers, but explores a completely new range of material combinations. Instead of an InGaAs quantum well sandwiched between AlGaAs tunnel barriers and heavily n-doped GaAs source and drain contacts, our device is fabricated out of an organic semiconductor thin film sandwiched between Al2O3 tunnel barriers and metal source and drain contacts. Contrary to conventional vertical QDs, the different layers in our device do not need to be lattice-matched, which offers great flexibility in materials choice. In our layout, e.g., it is straightforward to fabricate ferromagnetic and superconducting source and drain contacts coupled to the QD. This is an extremely hard thing to do in conventional vertical QDs and opens up the possibility for fascinating physical experiments in the few-charge regime, such as electrically tunable magnetoresistance and supercurrent. Moreover, organic semiconductors are recently attracting a lot of attention as suitable hosts for electron spins, because of the weak spin-orbit coupling (light elements) and possibly reduced hyperfine interaction in these materials. Our system potentially allows for confinement of single electron (hole) spins with extremely long coherence times, being very attractive for electron-spin based quantum information processing. The design is easily extended to few-charge double QDs.\n\nThis project has a fundamental character and economic/societal impact is reasonably not expected on the short term. However, in the long run our design may prove to be extremely useful and versatile for hybrid inorganic-organic logic devices, non-volatile memory elements and or quantum bits for quantum information processing.", "project_members": [ { "role": "Researcher", "member_id": 272208, "last_name": "Liu", "degree_pre_nominal": "dr.", "initials": "Z.", "first_name": "Zhihua", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||Nano Electronics", "organisation_id": 76877, "ror": "https://ror.org/006hf6230", "active": false }, { "role": "Researcher", "member_id": 177503, "last_name": "Siekman", "degree_pre_nominal": "ing.", "initials": "M.H.", "first_name": "Martin", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||Nano Electronics", "organisation_id": 76877, "ror": "https://ror.org/006hf6230", "active": false }, { "role": "Researcher", "member_id": 193242, "last_name": "Bolhuis", "degree_pre_nominal": "ing.", "initials": "T.", "first_name": "Thijs", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||Nano Electronics", "organisation_id": 76877, "ror": "https://ror.org/006hf6230", "active": false }, { "role": "Researcher", "member_id": 244638, "last_name": "Wilbers", "initials": "J.G.E.", "first_name": "Janine", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||Nano Electronics", "organisation_id": 76877, "ror": "https://ror.org/006hf6230", "active": false }, { "role": "Co-applicant", "member_id": 200340, "last_name": "Jong", "degree_pre_nominal": "dr. ir.", "initials": "M.P.", "first_name": "Michel", "prefix": "de", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||MESA+ Research Institute for Nanotechnology", "organisation_id": 62027, "ror": "https://ror.org/006hf6230", "active": true }, { "role": "Main Applicant", "member_id": 189617, "last_name": "Wiel", "degree_pre_nominal": "prof. dr. ir.", "initials": "W.G.", "first_name": "Wilfred", "prefix": "van der", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)", "organisation_id": 62021, "ror": "https://ror.org/006hf6230", "active": true }, { "role": "Project leader", "member_id": 189617, "last_name": "Wiel", "degree_pre_nominal": "prof. dr. ir.", "initials": "W.G.", "first_name": "Wilfred", "prefix": "van der", "organisation": "Universiteit Twente||Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS)||MESA+ Research Institute for Nanotechnology", "organisation_id": 62027, "ror": "https://ror.org/006hf6230", "active": true } ] } ] }